کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5436041 1509546 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomistic study of nucleation and migration of the basal/prismatic interfaces in Mg single crystals
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Atomistic study of nucleation and migration of the basal/prismatic interfaces in Mg single crystals
چکیده انگلیسی

The formation of the basal/prismatic (BP) interfaces during nucleation and growth of a reoriented crystal in Mg single crystals under c-axis tension is investigated by molecular dynamics simulations. The BP interfaces nucleate by a shuffling mechanism via local atomic rearrangement. Both two-layer disconnection and one-layer disconnection contribute to the migration of the BP interfaces. The three-dimensional analysis reveals that the two-layer disconnection forms at the junction between the partial pyramidal dislocation and BP interface. The BP interfacial disconnections prefer to move towards the [12¯10] direction rather than the [1¯010]/[0001] direction due to the accumulation of mismatches along the [1¯010]/[0001] direction. Moreover, the BP interface can transform to the {101¯2} twin boundary and vice versa. The transformation from a BP interface to a twin boundary occurs through the diagonal pile-up of BP interface disconnections, and the reverse transformation involves an upright pile-up process. Both BP transformation and {101¯2} twinning can effectively accommodate the applied tensile strain along the c-axis. The co-existing BP interfaces and {101¯2} twin boundaries allow for large deviations of a twin interface from the {101¯2} twin plane.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 130, 15 May 2017, Pages 310-318
نویسندگان
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