کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544139 1450325 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Through-silicon-via (TSV) filling by electrodeposition with pulse-reverse current
ترجمه فارسی عنوان
پر شدن اتصال از طریق سیلیکون (TSV) توسط گالوانیزه کردن با جریان پالس معکوس
کلمات کلیدی
TSV؛ Cu؛ گالوانیزه کردن؛ جریان معکوس پالس
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی

The through-Si-via (TSV) interconnection provides the ideal 3D interconnection in a next generation semiconductor device which has significantly innovated function, excellent performance and high efficiency. In this study, TSV fillings by electrodeposition of Cu with various current forms were carried out to improve the via filling rate. Especially, the influence of reverse current density and average current density on the TSV filling property was studied. ~ 7% of improvement in via filling rate compared with using direct current (DC) was achieved by applying the pulse-reverse current form, which was mainly caused by effective adsorption and redistribution of additives inside via.

TSV fillings by electrodeposition of Cu with pulse-reverse current were carried out to improve the via filling rate. Influence of reverse current density and average current density on the TSV filling property was focused on.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 156, 20 April 2016, Pages 15–18
نویسندگان
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