کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5441573 | 1510664 | 2017 | 62 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review
ترجمه فارسی عنوان
رشد تراشه های نانوسیمهای اکسید فلزی نیمه رسانا برای سنسورهای گاز: یک بررسی
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
چکیده انگلیسی
Semiconductor metal oxide nanowires (SMO-NWs) show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW). SMO-NW sensors can be configured as resistors or field-effect transistors for gas detection and different configurations, such as a single NW, multiple NWs, and networked NW films, have been established. Surface-functionalizing NWs with catalyst elements and self-heating NWs provide additional advantages for highly selective and low-power consumption gas sensors. However, an appropriate design of SMO-NWs is of practical importance in enhancing the gas-sensing performance of SMO-NW sensors. The on-chip growth of SMO-NWs possesses many advantages which can thus be effectively used for the large-scale fabrication of SMO-NW sensors with improved gas response and stability. This review aims to provide up-to-date information on the on-chip fabrication of SnO2, ZnO, WO3, CuO, and other SMO-NW sensors. It also discusses a variety of promising approaches that help advance the on-chip fabrication of SMO-NW-based gas sensors and other NW-based devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Science: Advanced Materials and Devices - Volume 2, Issue 3, September 2017, Pages 263-285
Journal: Journal of Science: Advanced Materials and Devices - Volume 2, Issue 3, September 2017, Pages 263-285
نویسندگان
Chu Manh Hung, Dang Thi Thanh Le, Nguyen Van Hieu,