کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5441618 | 1398268 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111) by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40%) internal quantum efficiency at room temperature, relative to that measured at 5Â K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556Â A/cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Science: Advanced Materials and Devices - Volume 2, Issue 2, June 2017, Pages 150-155
Journal: Journal of Science: Advanced Materials and Devices - Volume 2, Issue 2, June 2017, Pages 150-155
نویسندگان
M.R. Philip, D.D. Choudhary, M. Djavid, K.Q. Le, J. Piao, H.P.T. Nguyen,