کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5442977 | 1510769 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Al additives on growth of GaN polycrystals by the Na flux method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation and purity of GaN polycrystals. The yields of GaN crystals grown in Al-added Na flux were dramatically increased from those in Al-free Na flux, and the polycrystals grown by the Al-added Na flux method were highly transparent. As observed in secondary ion mass spectroscopy measurements, the Al content of the polycrystals was below the detection limit of 3Â ÃÂ 1016 atoms/cm3. From these results, the Al-added Na flux method is found to be appropriate for fabricating a large amount of GaN polycrystals without deteriorating the crystal quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 65, March 2017, Pages 42-45
Journal: Optical Materials - Volume 65, March 2017, Pages 42-45
نویسندگان
Hiroki Imabayashi, Kosuke Murakami, Daisuke Matsuo, Masatomo Honjo, Masayuki Imanishi, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, Yusuke Mori,