کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544816 | 871784 | 2010 | 5 صفحه PDF | دانلود رایگان |
With the rapid development of chemical mechanical polishing technique as well as its increasing application in IC foundry, the abrasives of slurry are required to have different specifications in terms of size and size’s distribution, which play a vital role in the material removal and defect control. In this study, we monitor in detail the growth process of colloidal silica abrasives changing from the tiny nuclei to large nanoparticles by means of the electron microscopy images. Using the procedure we develop, we are capable of producing monodisperse colloidal silica nanoparticles ranging from 60 to 130 nm in diameter, which are mostly often applied as abrasives in chemical mechanical planarization/polishing (CMP) process of integrated circuit (IC) manufacturing. The physicochemical properties of the silica synthesized by our procedure are also characterized by the X-ray diffraction (XRD) patterns and thermal analysis. The polishing test adopting the colloidal silica as abrasives is performed on silicon wafer to evaluate the CMP properties.
Journal: Microelectronic Engineering - Volume 87, Issue 9, November 2010, Pages 1751–1755