کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544819 | 871784 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
An analytical drain current model for undoped (or lightly-doped) symmetric double-gate (DG) MOSFETs is presented. This model is based on the subthreshold leakage current in weak inversion due to diffusion of carriers from source to drain and an analytical expression for the drain current in strong inversion of long-channel DG MOSFETs, both including the short-channel effects. In the saturation region, the series resistance, the channel length modulation, the surface-roughness scattering and the saturation velocity effects were also considered. The proposed model has been validated by comparing the transfer and output characteristics with simulation and experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 9, November 2010, Pages 1764–1768
Journal: Microelectronic Engineering - Volume 87, Issue 9, November 2010, Pages 1764–1768
نویسندگان
A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, G. Pananakakis, N. Collaert,