A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices

In this paper a quantitative determination of the elemental distributions across a ∼10 nm Ga2O3/GdGaO layer with a Pt metal gate cap on top of an InGaAs/AlGaAs/GaAs substrate is presented. Some effects of annealing on the elemental distribution across the Ga2O3/GdGaO oxide layer are described. The paper also discusses the analysis of the interface GaAs/Ga2O3/GGO at a sub-nm level by high-resolution HAADF STEM imaging.