In-situ TEM observation of Multilevel Storage Behavior in low power FeRAM device

TOC: Key observation on the ferroelectric resistive switching in highly strained BiFeO3thin film based switchable diode. Utilizingin situelectrical TEM, movement of the phase boundary, and the phase transition are revealed along with ferroelectric polarization reversal. The change of resistance is suggested to the result of the polarization reversal between various states, composed of R- and T-like phases, which is verified by enhancement of displacement current output and explained by variation of Schottky barrier height. This result demonstrates the promising potential for high-density universal memory.303