Thermal characterization of embedded electronic features by an integrated system of CCD thermography and self-adaptive numerical modeling

This work provides a practical application of a coupled experimental–computational system devised for the full characterization of the thermal behavior of complex three-dimensional active submicron electronic devices. A thermoreflectance thermography (TRTG) technique is used to non-invasively measure the 2D surface temperature field of an activated device, with submicron spatial resolution. The measured planar temperature distribution field is then used as input for an ultra-fast inverse computational solution to derive the three-dimensional temperature distribution throughout the device. For the purposes of this investigation, test micro-heater devices were constructed on epitaxial layers of natural (Si) and isotopically pure (Si28) silicon. Then, all devices were activated and measured with the TRTG technique. In order to demonstrate the coupled experimental–computational system, the measured temperature fields of the samples whose thermal properties are known (Si) were used to extract critical physical parameters (the oxide layer thickness and the effective heater length). Then, since the devices with unknown thermal properties (Si28) share the same construction with the Si devices, the extracted parameters were used together with the measured planar temperature fields to derive the thermal conductivity of Si28. The extracted oxide layer thickness and thermal conductivity of Si28 compared very closely to values obtained by other independent direct methods.