Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach

Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9–10, August–September 2015, Pages 1422-1426

Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey,