کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117501 | 1461361 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sulfurization temperature dependent physical properties of Cu2SnS3 films grown by a two-stage process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Cu2SnS3 (CTS) is a promising absorber for thin film solar cells because of its suitable opto-electronic properties. This article reports the effect of sulfurization temperature (Ts) on the physical properties of CTS thin films deposited by two-stage process. X-ray diffraction and Raman analyses revealed that sulfurized CTS films exhibited different polymorphic forms, such as triclinic structure (at Ts =â¯350â¯Â°C), tetragonal structure (at Ts =â¯400â¯Â°C), and monoclinic structure (at Ts =â¯450â¯Â°C). A phase change from monoclinic CTS to orthorhombic Cu3SnS4 was observed at Ts =â¯500â¯Â°C. The AFM results confirmed that the sulfurized films had the smooth surface without pinholes. The optical band gap was varied in the range, 2.34-1.49â¯eV with increasing sulfurization temperature from 150â¯Â°C to 500â¯Â°C. All the sulfurized films showed p-type conducting nature. The obtained results indicated that single phase CTS films prepared in the temperature range of 400-450â¯Â°C could be used as an absorber layer for the application of thin film solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 86, 1 November 2018, Pages 164-172
Journal: Materials Science in Semiconductor Processing - Volume 86, 1 November 2018, Pages 164-172
نویسندگان
Phaneendra Reddy Guddeti, Sreedevi Gedi, K.T. Ramakrishna Reddy,