کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117924 | 1461369 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The evaluation and investigation of electrical parameters drifts during device operation is one of the mandatory task that has to be performed in order to improve GaN-power devices stability. In this work the authors would like to present a novel characterization method that allows the simultaneous monitoring of both RON and VTH during the switch-mode operation. By applying the proposed measurement method with different operating parameters it has been possible to provide a preliminary interpretation of the physical mechanisms leading to the observed RON increase and VTH positive shift. In particular, the observed RON increase, which is thermally activated with a 0.83Â eV activation energy, has been ascribed to the presence of Carbon-related traps within the device buffer layer. On the other hand, the positive VTH shift has instead been related to interface defects at the dielectric/III-N interface and/or to bulk traps in the gate dielectric.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 78, May 2018, Pages 127-131
Journal: Materials Science in Semiconductor Processing - Volume 78, May 2018, Pages 127-131
نویسندگان
Alessandro Chini, Ferdinando Iucolano,