کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118072 | 1461372 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of TiO2/ZnO bilayer electron transport layer to enhance efficiency of perovskite solar cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present study, TiO2/ZnO bilayer as electron transport layer is optimized and used to design a perovskite solar cell. This bilayer helps in high electron extraction and low interfacial recombination. TiO2 films are prepared using spray pyrolysis techniques on fluorine doped tin oxide substrate. The deposition parameters are optimized using parametric study as well as using the Taguchi optimization technique. ZnO is used as other part of electron transport bilayer to reduce the charge recombination. The thickness of prepared TiO2 film obtained at Taguchi optimum condition (103Â nm) is lower than that of obtained at parametric optimum condition (147Â nm). At optimum conditions, the optical band gaps are in the range of 3.20-3.25Â eV. The prepared TiO2 films are consequently applied in perovskite solar cell preparation. 4-tert-butylpyridine is used with PbI2 to increase the stability of the perovskite solar cell. In addition, spiro-OMeTAD and Pt- fluorine doped tin oxide are used as hole transport material and counter electrode, respectively. The power conversion efficiency of the device at optimum conditions (parametric (D5) and Taguchi (D9)) has been found as 5.59% and 6.51%, respectively. The power conversion efficiency of the device using 4-tert-butylpyridine as stabilizer has been found as 7.39% (D11), which is highest among all devices. Current density (Jsc), open circuit voltage (Voc) and the fill factor obtained for the device (D11) are 17.87Â mAÂ cmâ2, 0.65Â V, and 64%, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 149-156
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 149-156
نویسندگان
Nitu Kumari, Jignasa V. Gohel, Sanjaykumar R. Patel,