کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7118235 1461373 2018 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions
چکیده انگلیسی
The Seebeck coefficients are studied in asymmetric double-barrier magnetic tunnel junctions (DBMTJs) with the structures as CoFeB/MgO/ZnO/MgO/LSMO. In the linear response regime, oscillatory behavior is observed with change in the ZnO layer thickness because of the resonant tunneling in the DBMTJs. Effects of average temperature and magnetizations orientation are also discussed. It is found that the Seebeck coefficients are greater in the DBMTJs than asymmetric single-barrier MTJs (SBMTJs). Therefore, it is to be achieved the greater Seebeck coefficients by choosing a proper thickness for the ZnO layer in the proposed asymmetric DBMTJs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 255-260
نویسندگان
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