کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118235 | 1461373 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions](/preview/png/7118235.png)
چکیده انگلیسی
The Seebeck coefficients are studied in asymmetric double-barrier magnetic tunnel junctions (DBMTJs) with the structures as CoFeB/MgO/ZnO/MgO/LSMO. In the linear response regime, oscillatory behavior is observed with change in the ZnO layer thickness because of the resonant tunneling in the DBMTJs. Effects of average temperature and magnetizations orientation are also discussed. It is found that the Seebeck coefficients are greater in the DBMTJs than asymmetric single-barrier MTJs (SBMTJs). Therefore, it is to be achieved the greater Seebeck coefficients by choosing a proper thickness for the ZnO layer in the proposed asymmetric DBMTJs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 255-260
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 255-260
نویسندگان
Reza Daqiq,