کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
726832 | 892653 | 2013 | 4 صفحه PDF | دانلود رایگان |
Quantum well intermixing (QWI) has been widely used in modifying the bandgap of semiconductor materials, post-growth; it has been investigated in fabricating non-absorbing mirror regions of laser cavities to improve output power. In this work, the QWI mechanism is briefly introduced. A concentration distribution function in multiple quantum wells is mathematically obtained for odd and even wells respectively. In addition, a 650 nm AlGaInP/GaInP quantum well wafer is fabricated by metal organic vapor phase epitaxy, and a series of quantum well intermixing experiments is accomplished by Zn impurity diffusions. Based on experimental data, a concentration distribution function is simulated and an inter-diffusion coefficient between Al and Ga is calculated. Finally, the effects of QWI on the inter-diffusion coefficient are discussed.
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 3, June 2013, Pages 738–741