کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728099 1461415 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications
چکیده انگلیسی

In this paper, we report a theoretical investigation of bandgap properties of GaAsNBi based materials on GaAs substrates. We look at the influence of nitrogen (N) and bismuth (Bi) concentrations on the position of conduction and valence bands; and we show that a split of the conduction band can take place with the incorporation of N at 5% under level, while a split of the valence band of both heavy and light holes sub-bands takes place after the incorporation of Bi at 14% under level. In order to compute the transition energies, we used the VBCA k.p 16×16 model. The N and Bi concentrations effects as well as the lattice mismatch value have also been taken into account. For a couple of N and Bi concentrations of 3% and 6%, we found strained gap energy around 0.68 eV. Furthermore, we have also shown that the absorption coefficient increases significantly when the N and Bi concentrations increase.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 31, March 2015, Pages 568–572
نویسندگان
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