کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729842 1461433 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural and optical properties of Cu(In,Ga)Se2 grown by close-spaced vapor transport technique
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Structural and optical properties of Cu(In,Ga)Se2 grown by close-spaced vapor transport technique
چکیده انگلیسی

Polycrystalline thin films CuGa0.3In0.7Se2 (CIGS) were deposited onto coated soda-lime glass and transparent conducting oxide (SnO2) substrates at 480 °C substrate temperature with a low cost and potentially large area deposition method by using close-spaced vapor transport technique (CSVT) designed in our laboratory (LAMPS). Morphological, structural and compositional properties were determined using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS), respectively. Optical transmission spectra were used to determine absorption coefficient and gap energy of the sample. Using photoacoustic spectroscopy, we report the activation energies of shallow and deep levels. Finally, we discuss the results obtained.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 12, Issues 1–2, February–April 2009, Pages 82–87
نویسندگان
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