کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748444 1462253 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The electrical, optical, and structural properties of amorphous indium gallium zinc oxide films and channel thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
The electrical, optical, and structural properties of amorphous indium gallium zinc oxide films and channel thin-film transistors
چکیده انگلیسی

The electrical, optical, and structural properties of amorphous indium gallium zinc oxide (a-IGZO) films deposited at room temperature (RT) examined before and after annealing using a radio frequency (RF) magnetron sputtering system with different hydrogen and oxygen gas flow ratios. The carrier concentration and resistivity of the a-IGZO films fabricated under O2/Ar + O2 and O2/Ar–4%H2 + O2 atmospheres were greatly dependent on the addition of hydrogen and heat treatment. Thin-film transistors (TFTs) with an a-IGZO channel layer deposited under O2/Ar–4%H2 + O2 = 1.6% exhibited good subthreshold gate voltage swing (S), on/off ratio, threshold voltage and μFE of 0.4 V decade−1, 108, 0.3 V and 4.8 cm2 V−1 s−1, respectively. From analysis of the interfacial structure in TFTs before and after annealing, the electrical conductivity of the a-IGZO channel layer was greatly affected in regard to TFT performance due to the amorphous a-IGZO channel layer and SiO2 gate insulator.


► a-IGZO films were deposited on unheated substrates by RF magnetron sputtering.
► The electrical, optical and structural properties of a-IGZO films were investigated.
► The electrical properties of films were dependent on the addition of hydrogen and heat treatment.
► The electrical conductivity of a-IGZO channel layer was greatly affected in TFT performance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 79, January 2013, Pages 125–129
نویسندگان
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