Keywords: a-IGZO; Thin film transistor; Metal penetration; Work function; Oxygen vacancy
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Sol-gel derived low temperature HfO2-GPTMS hybrid gate dielectric for a-IGZO thin-film transistors (TFTs)
Keywords: Sol-gel; Low-temperature process; Hybrid dielectric materials; a-IGZO; TFTs;
Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment
Keywords: a-IGZO; Flexible electronics; Thin-film transistor; Contact resistance; Plasma treatment; CF4;
The influence of nitrogen implantation on the electrical properties of amorphous IGZO
Keywords: a-IGZO; Nitrogen implantation; Oxygen defects; Carrier concentration; Hall mobility; Structural disorder;
Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure
Keywords: Thin-film transistor; a-IGZO; Bending curvature radius; Plastic substrate; Split channel
High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein
Keywords: a-IGZO; BSA; Protein; TFT; EDL
Soft X-ray photoelectron spectroscopic investigation of Au-deposited amorphous In–Ga–Zn–O thin-film surface
Keywords: Au-deposition; Amorphous In–Ga–Zn–O; a-IGZO; Metal contact on a-IGZO; Au deposition on a-IGZO
Electrical behavior of amorphous indium–gallium–zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer
Keywords: a-IGZO; TFTs; Au; Nanoparticles
Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors
Keywords: Flexible device; a-IGZO; Hybrid gate dielectrics; Thin film transistors;
Drain bias effect on the instability of amorphous indium gallium zinc oxide thin film transistor
Keywords: a-IGZO; TFT; Stability; Drain bias stress
The electrical, optical, and structural properties of amorphous indium gallium zinc oxide films and channel thin-film transistors
Keywords: Transparent amorphous oxide semiconductor; a-IGZO; Thin-film transistor
Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors
Keywords: Thin-film transistor; Amorphous oxide semiconductor; a-IGZO; Ozone annealing; Oxygen atom
Effect of magnesium oxide passivation on the performance of amorphous indium–gallium–zinc-oxide thin film transistors
Keywords: MgO; Passivation; Stability; a-IGZO
High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric
Keywords: a-IGZO; Polymer; High mobility;
Stability of a-InGaZnO thin film transistor under pulsed gate bias stress
Keywords: a-IGZO; TFT; Stability
Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing
Keywords: a-IGZO; Polymer; TFT; High mobility
Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing
Keywords: Thin-film transistor; Amorphous oxide semiconductor; a-IGZO; Low-temperature annealing
The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source–drain structure
Keywords: a-IGZO; Thermal annealing; Plasma treatment; Sheet resistance
Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors
Keywords: Gate oxide; TTFT (transparent thin film transistor); Leakage current; Y2O3; a-IGZO
Transparent amorphous In–Ga–Zn–O thin film as function of various gas flows for TFT applications
Keywords: Transparent amorphous oxide semiconductor; a-IGZO; Oxide TFTs
Transparent, high mobility InGaZnO thin films deposited by PLD
Keywords: AOS; Amorphous semiconductor; Amorphous oxide semiconductor; IGZO; a-IGZO; PLD; Mobility; Transparent conducting oxide; TCO