کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785920 1023399 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical behavior of amorphous indium–gallium–zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electrical behavior of amorphous indium–gallium–zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer
چکیده انگلیسی


• The a-IGZO TFTs with Au NPs exhibited off-current increase and Vth shift.
• Au NPs can act as either electron injection or trap site in the a-IGZO channel layer.
• Au NPs can form carrier conduction path causing current leakage in the channel layer.
• Carrier conduction path is especially affected by distance between adjacent Au NPs.

We reported the effects on the electrical behavior of amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) after introducing various positions and sizes of Au nanoparticles (NPs) in the channel layer. These TFTs showed an off-current increase and threshold voltage (Vth) shift compared to conventional a-IGZO TFTs. The effects of Au NPs are explained to form the carrier conduction path which causes the current leakage in the channel layer, and act as either electron injection sites or trap sites. Therefore, this study demonstrates that the optimized control of size and position of Au NPs in the channel layer is crucial for its application in the electrical stability improvement and Vth control of a-IGZO TFTs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 14, Issue 12, December 2014, Pages 1767–1770
نویسندگان
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