Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.