Intersubband optical absorption in GaAs parabolic quantum well due to scattering by ionized impurity centers, acoustical and optical phonons

The intersubband absorption linewidth dependence on well width in GaAs quantum well is calculated. Three mechanisms of scattering have been discussed there: carriers scattering by optical (LO), acoustic (LA) phonons and ionized impurity centers (ION). The method which used for calculations is similar to a well-known method of calculating transport mobility. The estimation for absorption coefficient is proposed, based on two-dimensional dynamical conductivity expression. The LO phonon emission process is activated starting from some quantum well (QW) width so it has its impact on absorption linewidth.