Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell

In this paper, a new p–InGaN multiple quantum well–n solar cell has been investigated. In order to obtain the exact solar cell parameters such as conversion efficiency, the polarization field effects of nitride materials are taken into account. It has been found that the conversion efficiency of the p–i(MQW)–n solar cell is significantly higher than those of normal p–i(bulk)–n solar cells. The optimized conversion efficiency of about 35% is obtained for p–MQW–n solar cells at room temperature. Also, the temperature dependence of open-circuit voltage and short-circuit current and consequently conversion efficiencies of both structures are investigated, and it is observed that the increasing of temperature slightly increases the short-circuit current and decreases the open-circuit voltage and efficiency.

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► A new p(GaN)–(InGaN)multiple quantum well–n(GaN) solar cell has been investigated.
► Obtained conversion efficiency is significantly higher than those of p–i(bulk)–n solar cells.
► Optimized conversion efficiency of about 35% is obtained at room temperature.
► Increasing temperature slightly increases short-circuit current and decreases open-circuit voltage.
► Increasing temperature decreases efficiency.