Negative differential resistance in heterojunction polymeric films

For the first time, Negative Differential Resistance (NDR) is reported in purely polymeric systems. A tri-layer thin film system of PEDOT:PSS, P3HT and PCBM was prepared using spin coating method on ITO substrates and Al contact was deposited on other side using thermal vacuum evaporation. Current -Voltage (I-V) measurements were carried out at room temperature where NDR behaviour was observed which was repeatable only qualitatively for as-prepared device. On annealing at 40 °C for 2 h, the NDR became stable however at the cost of peak broadening and was even repeatable quantitatively within reasonable percentage of errors. On further annealing at higher temperatures (60° & 80° C), the NDR disappeared most likely due to isolated networks and disconnected domains of P3HT/PCBM. Simple construction, robust NDR and large current shown by these devices make them potential candidate for the development of organic memory elements.