کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939471 | 1513188 | 2018 | 32 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hybrid light-emitting devices by incorporating WO3 nanorod arrays as the electron transport layer and PEIE as the buffer layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this research, we demonstrate novel inverted light-emitting devices based on n-typed tungsten trioxide (WO3) nanostructures. Two different types of WO3 nanostructures, including nanocluster layer (NCL) and nanorod arrays (NAs), were grown on the indium-tin oxide (ITO) substrates by the hydrothermal method. An ultra-thin polyethylenimine ethoxylated (PEIE) layer was deposited on top of WO3 nanostructures as the buffer layer for improving device performance. Inverted devices with the configuration of ITO/WO3 NCL or NAs/PEIE/poly(2-methoxy-5-(2â²-ethylhexyloxy)-1,4-phenylene vinylene)/poly(3,4- ethylenedioxythiophene):poly(styrene sulfonate)/WO3 film/Au were constructed and evaluated. The best device based on WO3 NAs with height of 300Â nm showed a max brightness of 3079Â cd/m2 and current efficiency of 0.22Â cd/A. Our observation and results open up new opportunities to fabricate hybrid light-emitting devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 667-677
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 667-677
نویسندگان
Chun-Kai Chang, Szu-Ping Wang, Sheng-Hsiung Yang, Apolline Puaud, Thien-Phap Nguyen,