Tightly bound indirect exciton in single-layer hybrid organic-inorganic perovskite semiconductor

We theoretically study the direct and indirect excitons (IXs) in a single-layer hybrid organic-inorganic perovskite (HOIP) semiconductor. Due to the 2D nature, the single-layer HOIP supports the large binding energy of IXs and direct excitons over a wide range of applied electric fields, which exceed the thermal energy of room temperature. Moreover, the ground-state IX has a lower energy than that of direct exciton, which will extend the coherence and relaxation time of IXs. This is beneficial to optoelectronic applications and excitonic information processing devices of IXs.