کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940246 | 1513192 | 2017 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Confinement-dependent exciton binding energy in wurtzite GaN/AlxIn1âxN quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Exciton binding energies for wurtzite (WZ) GaN/AlxIn1âxN quantum dots (QDs) with piezoelectric (PZ) and spontaneous (SP) polarizations were investigated by using an effective mass theory. The exciton binding energy gradually decreases with increasing Al content x in the barrier. This can be explained by the fact that the wave functions spreads into the barrier region with decreasing Al content and a higher dimensional character of the exciton is restored. The exciton binding energies for the case with PZ and SP polarizations appears to be much smaller than that for the flat-band model without the built-in field due to PZ and SP polarizations. However, their difference is observed to be negligible due to reduction in carrier confinement for the case with a relatively low Al content (x = 0.7).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 254-258
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 254-258
نویسندگان
Seoung-Hwan Park, Woo-Pyo Hong, Jong-Jae Kim,