Asymmetrically doped stacked channel strained SOI FinFET

Strained SOI (SSOI) n-channel trigate FinFET is designed with asymmetrically doped stacked channels along the fin height. The OFF current is reduced with respect to lightly doped uniform SSOI FinFET because of band gap modification, originated between highly doped uniaxial strained and lightly doped Si fin. Through TCAD simulation it is observed that for the stacked devices the OFF current is reduced by more than 47%. The performances are also compared with highly doped uniform SSOI FinFETs and the results indicated that these devices have lesser random dopant variation at a moderate cost of ON and OFF current.