کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941209 | 1513199 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, n-InGaN and u-InGaN are proposed to be the lower waveguide (LWG) and quantum barrier (QB), respectively, to eliminate the leakage of optical field to GaN substrate in GaN-based green laser diode (LD). The optical and electrical characteristics of LDs are calculated by the economic software LASTIP, and it is found that the leakage of optical field is suppressed significantly and the threshold current is also reduced. Further theoretical analysis shows that n-In0.08Ga0.92N LWG and u-In0.02Ga0.98N QB is effective to concentrate the optical field and to enhance optical confinement for our green LDs, leading to an improvement of optical and electrical performance of green LDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 102, February 2017, Pages 484-489
Journal: Superlattices and Microstructures - Volume 102, February 2017, Pages 484-489
نویسندگان
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Wei Liu, Xiang Li, Shuangtao Liu, Yao Xing, Liqun Zhang, Heng Long, Jian Zhang,