A nanoscale dual-channel trench (DCT) MOSFET for analog/RF applications

In this paper, we propose a dual-channel trench MOSFET (DCT-MOSFET) on SOI for high-frequency small signal analog applications. The gate of device is placed in a trench which creates two n-channels in p-base carrying drain current in parallel. Simultaneous conduction of two-channels provides substantial improvement in performance parameters. Based on two-dimensional simulations, a 60 nm DCT-MOSFET is demonstrated to achieve 92% higher drain current, twofold increase in peak transconductance, 67% rise in transconductance-to-drain current ratio, 47% higher intrinsic voltage gain, 90% improvement in cut-off frequency and 2.1 times higher maximum oscillation frequency as compared to the conventional MOSFET.