کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7986620 | 1515148 | 2015 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Damage behavior and atomic migration in MgAl2O4 under an 80Â keV scanning focused probe in a STEM
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
With the dramatic improvement in the spatial resolution of scanning transmission electron microscopes over the past few decades, the tolerance of a specimen to the high-energy electron beam becomes the limiting factor for the quality of images and spectra obtained. Therefore, a deep understanding of the beam irradiation processes is crucial to extend the applications of electron microscopy. In this paper, we report the structural evolution of a selected oxide, MgAl2O4, under an 80Â keV focused electron probe so that the beam irradiation process is not dominated by the knock-on mechanism. The formation of peroxyl bonds and the assisted atomic migration were studied using imaging and electron energy-loss spectroscopic techniques.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Micron - Volume 68, January 2015, Pages 141-145
Journal: Micron - Volume 68, January 2015, Pages 141-145
نویسندگان
Guo-zhen Zhu, Gianluigi A. Botton,