کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7986620 1515148 2015 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Damage behavior and atomic migration in MgAl2O4 under an 80 keV scanning focused probe in a STEM
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Damage behavior and atomic migration in MgAl2O4 under an 80 keV scanning focused probe in a STEM
چکیده انگلیسی
With the dramatic improvement in the spatial resolution of scanning transmission electron microscopes over the past few decades, the tolerance of a specimen to the high-energy electron beam becomes the limiting factor for the quality of images and spectra obtained. Therefore, a deep understanding of the beam irradiation processes is crucial to extend the applications of electron microscopy. In this paper, we report the structural evolution of a selected oxide, MgAl2O4, under an 80 keV focused electron probe so that the beam irradiation process is not dominated by the knock-on mechanism. The formation of peroxyl bonds and the assisted atomic migration were studied using imaging and electron energy-loss spectroscopic techniques.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Micron - Volume 68, January 2015, Pages 141-145
نویسندگان
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