Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

► Sb concentration in axial GaAsSb inserts of GaAs nanowires was studied using quantitative HAADF-STEM. ► The Sb distribution was analysed in both axial and radial directions. ► Sb concentration builds up gradually along the insert and drops either gradually or abruptly, depending on the growth conditions. ► Sb concentration is reduced towards the outer surfaces of the nanowires. ► Including the static atomic displacements in the image simulations was crucial for correct compositional analysis of GaAsSb.