کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7987733 | 1515521 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of hopping conduction on the thermopower of indium oxide thick films
ترجمه فارسی عنوان
تأثیر هدایت پرش بر گرماسنجی فیلمهای ضخیم اکسید ایندیوم
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
چکیده انگلیسی
We have studied the temperature (T) dependent behaviors of thermopower (S) and resistivity (Ï) of a series of indium oxide (In2O3) thick films prepared at different oxygen partial pressures. For the films deposited at lower oxygen partial pressures, the Ïâ¯ââ¯T curves display metallic characteristics, and the relation between thermopower and temperature is dominated by the electron diffusion process. For the films deposited at higher oxygen partial pressures, the Mott type and Efros-Shklovskii type variable-range-hopping (VRH) processes are observed in the resistivity data. The thermopower obeys Sâ¯ââ¯T1â2 from â¼50 to â¼200â¯K, which can be explained by Mott VRH process. At lower temperatures, the existence of phonon-drag causes S to change from negative to positive with decreasing temperature and then present a peak value with further decreasing temperature. Our results demonstrate the validity of theoretical predictions concerning three dimensional Mott VRH thermopower.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 282, October 2018, Pages 45-49
Journal: Solid State Communications - Volume 282, October 2018, Pages 45-49
نویسندگان
Yang Yang, Ding-Bang Zhou, Zhi-Qing Li,