کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8166315 | 1526233 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates
ترجمه فارسی عنوان
عملکرد بالا دمای آشکارساز ذرات آلفا مبتنی بر گالیم-نیترید رشد شده بر روی زمینه های یاقوت کبود
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
چکیده انگلیسی
The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 893, 11 June 2018, Pages 39-42
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 893, 11 June 2018, Pages 39-42
نویسندگان
Zhifu Zhu, Heqiu Zhang, Hongwei Liang, Bin Tang, Xincun Peng, Jianxun Liu, Chao Yang, Xiaochuan Xia, Pengcheng Tao, Rensheng Shen, Jijun Zou, Guotong Du,