Study of the Mo thin films and Mo/CIGS interface properties

After co-evaporation of a Cu(In1−xGax)Se2 film the chemical and electrical properties of the Cu(In1−xGax)Se2/Mo interface have been studied. It is shown, by XPS depth profile, that MoSe2 is present at the interface. The contact resistivity ρc has been measured. Resistivities ρc < 0.08 Ω cm2 were found. From these XPS and electrical measurements it appears that the MoSe2 interfacial layer mediates low resistivity Mo/CIGS contact.