کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567342 | 1503713 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of diamond p-i-p structures at high electric fields
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using photo-lithography and plasma etching processes, we have fabricated high-field-applicable diamond p-i-p structures. Current-voltage (I-V) characteristics of devices thus fabricated, revealed rapid increases in current due to substantial impact excitations, whereas space-charge-limited currents such as I â V2 were observed at sufficiently high electric fields. There were substantial differences in I-V and electroluminescence (EL) properties observed above 1 Ã 106 V/cm between N-contained high-temperature/high-pressure-synthesized diamond and undoped chemical-vapor-deposited (CVD) diamond, indicating that these characteristics strongly depend on the Fermi level of the diamond i layer employed. Cathodoluminescence data were also compared with the EL data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 310-313
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 310-313
نویسندگان
M. Yamamoto, T. Watanabe, M. Hamada, T. Teraji, T. Ito,