کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9582207 | 1505183 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evidence for the atmospheric p-type doping of titanyl phthalocyanine thin film by oxygen observed as the change of interfacial electronic structure
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of O2 doping on titanyl phthalocyanine (TiOPc) thin films was investigated by ultraviolet photoelectron spectroscopy (UPS). The results revealed a clear change in the film thickness dependence of the energy of the electronic levels on exposure to O2. The film deposited in ultrahigh vacuum showed downward band bending characteristic of a n-type semiconductor, probably due to unintentional doping by residual impurity. On the other hand, the film deposited in O2 atmosphere showed upward band bending characteristic of a p-type semiconductor. This conversion is ascribed to the hole doping by O2. These results correspond well with the reported change of the electrical behavior for TiOPc-based field effect transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Physics Letters - Volume 414, Issues 4â6, 14 October 2005, Pages 479-482
Journal: Chemical Physics Letters - Volume 414, Issues 4â6, 14 October 2005, Pages 479-482
نویسندگان
Toshio Nishi, Kaname Kanai, Yukio Ouchi, Martin R. Willis, Kazuhiko Seki,