Structure of Co deposited 6H-SiC(0Â 0Â 0Â 1)

Clean 6H-SiC(0 0 0 1)-(3 × 3) surfaces were deposited with 0.25-3.5 Å Co at room temperature and subsequently annealed to 950 °C. The structure, chemistry and morphology of Co deposited SiC surfaces were investigated using low energy electron diffraction, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy. A Co-induced (6 × 6) superstructure is observed by LEED after annealing 0.25 Å Co deposited SiC surface at 700 °C for 5 min. At higher coverage, CoSi(1 × 1) domains rotated 30° with respect to the underlying SiC substrate are formed after annealing 3.5 Å Co deposited SiC surface at 300 °C for 5 min. The LEED patterns as a function of Co coverage and annealing temperature are also reported.