Growth of gadolinium oxide films for advanced MOS structure

We have investigated properties of insulating gadolinium oxide (Gd2O3) films in connection with the replacement of silicon oxide (SiO2) gate dielectrics in new generation of CMOS devices. The Gd2O3 layers were grown using metal organic chemical vapour deposition at temperature 500 °C. X-ray diffraction showed polycrystalline Gd2O3 films. X-ray photoelectron spectroscopy revealed interface layer, presumably gadolinium silicate. Capacitance-voltage characteristics were used to analyse electrical properties of Ru/Gd2O3/Si structures. The analysis yielded dielectric constant κ = 11.4 and interfacial layer thickness tIF = 1.7 nm.