Performance and new effects in advanced SOI devices and materials

In this paper, an overview of recently explored or discovered new effects in advanced SOI devices and materials is given. The impact of key device parameters on electrical and thermal floating body effects is addressed for various device architectures (PD and FD SOI, FinFETs, different buried insulators, etc.). Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are shown. The performance and physical mechanisms are also reviewed in multi-gate Si, SiGe and Ge MOSFETs. New hot carrier phenomena are discussed. Finally, the impact of gate misalignment or underlap, as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAM are outlined.