The electrical properties of Metal-Ferroelectric (PbZr0.53Ti0.47O3)-Insulator-Silicon (MFIS) capacitors with different insulator materials

MFIS capacitors with Pb(Zr0.53, Ti0.47)O3 (PZT) ferroelectric layer and HfO2, La2O3 and Dy2O3 insulator layers were fabricated and characterized. The size of the capacitance-voltage (C-V) memory windows was investigated. The maximum memory windows of MFIS capacitors with La2O3 and Dy2O3 insulators are close to the theoretical value ΔW ≈ 2dfEc ≈ 1.8 V. The temperature dependence of the current conduction mechanisms through the MFIS capacitors was also investigated. In the temperature range of 375-450 K, the electrical conduction of MFIS capacitors with HfO2 and Dy2O3 insulators is space-charge-limited current (SCLC), whereas for Al/PZT/La2O3/Si capacitor Poole-Frenkel emission was the dominant mechanism at higher fields (⩾0.8 MV/cm) in the temperature range from 325 K to 400 K.