Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (ueff) is around 300-cm2 /V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of ueff is comparable or better than the reported ones in the usual FinFETs with a (110) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.