کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670540 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electrical quality of ultra-thin (â¼1nm) Plasma and Thermal nitrided silicon oxide layers was investigated with Conductive AFM and a macroscopic I-V measurement setup. PN layers were found to be superior to TN layers. A longer nitridation time resulted in a better quality of the layer. Annealing in N2 was not beneficial and re-oxidation resulted in a lower leakage due to a significant increase in the physical thickness. A trap-assisted kind of tunneling was observed in these layers. The exact role of nitrogen herein is not yet well understood.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 436-439
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 436-439
نویسندگان
W. Polspoel, W. Vandervorst, J. Pétry, T. Conard, A. Benedetti,