کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670620 | 1450404 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective dry etch process for step and flash imprint lithography
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Unlike optical lithography processes, imprinting features via S-FIL creates a residual layer of several hundred angstroms thick, which requires a break-through etch prior to etching the transfer layer. Of greater concern is the etch barrier used as the imaging layer for S-FIL technology. The incorporated silicon content is limited to approximately nine percent, and the formulation is geared toward achieving mechanical properties for the imprinting process. As a result, typical oxygen-based plasmas used for transferring more conventional bi-layer structures are not compatible with the current S-FIL resist stack. A reducing chemistry using ammonia (NH3) plasma has been developed in providing a selective etch process for pattern transfer using S-FIL technology. The development of this NH3-based process was a key enabler in the fabrication of the world's first surface acoustic wave filters patterned via S-FIL technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 464-473
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 464-473
نویسندگان
Ngoc V. Le, William J. Dauksher, Kathy A. Gehoski, Douglas J. Resnick, A.E. Hooper, Steve Johnson, Grant Willson,