کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789709 | 1512914 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Piezoelectric field-dependent optical nonlinearities induced by interband transition in InGaN/GaN quantum well
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The binding energy of GaN/InGaN quantum well (QW) has been studied by taking the strain-induced piezoelectric and spontaneous polarization effects into account. The variational calculations are presented for the ground exciton state in the quantum wells, and the third-order susceptibilities, as functions of In content x, well width w, and pump photon energy âÏ, have also been analyzed. In addition, the results are compared with the data of previous work and some conclusions are given.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issues 1â2, March 2005, Pages 221-226
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issues 1â2, March 2005, Pages 221-226
نویسندگان
Junjie Li, Liming Liu, Duanzheng Yao,