کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789713 | 1512914 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Model schematics of a nanoelectronic device based on multi-endo-fullerenes electromigration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We investigated a nanoelectronic device based on multi-endo-fullerenes shuttle memory element based on nanopeapods using classical molecular dynamics simulations. We suggested the model schematics of endo-fullerene shuttle memory device fabrication. The dynamics of electroemission of endo-fullerenes from the peapod were closely related to the height of the potential energy barrier closely related to the threshold electrostatic field intensity, the empty nano space inside the peapod for endo-fullerene acceleration, the number of endo-fullerenes affecting the correlated collisions, the initial configuration of endo-fullerene in the peapod, and the period of the external electrostatic field. The endo-fullerene shuttle memory element could operate a nonvolatile nanomemory device. The switching speed, the applied force field, and the active region should be considered to design the endo-fullerene shuttle memory element.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issues 1â2, March 2005, Pages 245-252
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issues 1â2, March 2005, Pages 245-252
نویسندگان
Jeong Won Kang, Ho Jung Hwang,