کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812905 | 1518122 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of Ar ion-beam assistance and annealing temperatures on properties of TiO2 thin films deposited by reactive DC magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
TiO2 thin films were prepared by using a reactive DC magnetron sputtering method with Ar ion-beam assistance. The effect of the Ar ion-beam current on the structural and optical properties of the reactive magnetron sputtered TiO2 thin films was studied. The as-deposited films were subjected to annealing with the atmospheric environment, and the change of film properties after annealing was investigated. When the Ar ion-beam assistance was applied, the deposited TiO2 thin films were found to induce a higher deposition rate, a higher packing density and refractive index, a lower extinction coefficient, and a smoother surface than that of the film deposited without ion-beam assistance. The structures of all as-deposited films were amorphous. In the annealing process, the ion-beam-assisted TiO2 thin films had a phase transition from amorphous to anatase polycrystalline with a strong TiO2 anatase (101) peak at a temperature of 400 °C. At above 400 °C, the refractive index of deposited films increased by an anatase structure and the extinction coefficient increased due to a reduction in the oxidation of TiO2 thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 155-159
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 155-159
نویسندگان
Sung-Hwa Kim, Chang Kwon Hwangbo,