Keywords: LDMOS; Breakdown voltage; Deep gate; Extra oxide; SOI MOSFET
مقالات ISI (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
Keywords: Gate-All-Around; SOI MOSFET; Nanowire; Cryogenic temperature; Short channel effects; Analog parameters; Quantum transport; Low frequency noise; Noise spectroscopy;
Electrical characterization of vertically stacked p-FET SOI nanowires
Keywords: Performance; Transport; Electrical characterization; Vertically stacked nanowire; SOI MOSFET; Channel orientation;
A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect
Keywords: SOI MOSFET; Self-heating effect; Lattice temperature; Thermal resistance; Embedded region;
A novel technique at LDMOSs to improve the figure of merit
Keywords: LDMOS; Breakdown voltage; Figure of merit; SOI MOSFET
A novel Silicon on Insulator MOSFET with an embedded heat pass path and source side channel doping
Keywords: SOI MOSFET; Self heating; Short channel effects; Parasitic capacitance; Channel doping
Application, modeling and limitations of Y-function based methods for massive series resistance in nanoscale SOI MOSFETs
Keywords: Nano-Scaled Body devices; Ultra-Thin Body devices; SOI MOSFET; Analytical model; I–V characteristics; Series resistance
Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance
Keywords: SOI MOSFET; SIMOX; Series resistance; Mobility extraction; Gate-to-channel capacitance
Novel reduced body charge technique in reliable nanoscale SOI MOSFETs for suppressing the kink effect
Keywords: Accumulated holes; Embedded region; Esaki tunnel diode; Kink effect; SOI MOSFET
Improvement of self-heating effect in a novel nanoscale SOI MOSFET with undoped region: A comprehensive investigation on DC and AC operations
Keywords: Lattice temperature; Undoped region; SOI MOSFET; Self-heating effect;
SOI MOSFET with an insulator region (IR-SOI): A novel device for reliable nanoscale CMOS circuits
Keywords: High-K; Hot carrier effect; Insulator region HfO2; GIDL; Reliability; SOI MOSFET
Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET
Keywords: Generic MOSFET modeling; Asymmetric independent double-gate MOSFET; SOI MOSFET; Undoped body; Compact modeling; Complex variables
Proposal of preliminary device model and scaling scheme of cross-current tetrode SOI MOSFET aiming at low-energy circuit applications
Keywords: SOI MOSFET; Parasitic JFET; Differential negative conductance; Modeling; Performance control; Scaling scheme
Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel
Keywords: SOI MOSFET; UTB; Thin BOX; Subthreshold slope; Short channel effect; Substrate coupling
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
Keywords: SOI MOSFET; Ultra-thin SOI; Thin buried oxide; Threshold voltage; Subthreshold slope; Mobility
On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs
Keywords: SOI MOSFET; Envelope-function; k.p; Strain; Ultra-thin silicon
Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET
Keywords: Charge pumping; Light sensor; SOI MOSFET; Phototransistor
Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
Keywords: Simulation; Monte Carlo method; Drift-diffusion model; Hydrodynamic model; Nanometer MOSFET; Double-gate MOSFET; SOI MOSFET
Evaluation of graded-channel SOI MOSFET operation at high temperatures
Keywords: Graded-channel; SOI MOSFET; High-temperature; Fully depleted; New structure
Fabrication of ultra-thin-film SOI transistors using the recessed channel concept
Keywords: SOI MOSFET; Thin film SOI; Recessed channel; Reactive ion etching; Electron beam lithography;