Boron doping of silicon rich carbides: Electrical properties

Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarkable higher room temperature dark conductivity is obtained in the multilayer that includes a boron doped well, rather than boron doped barrier, indicating efficient doping in the former case. Room temperature lateral dark conductivity up to 10−3 S/cm is measured on the multilayer with boron doped barrier and well. The result compares favorably with silicon dioxide and makes SiC encouraging for application in photovoltaic devices.